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1/12 april 2004 stp6nk50z - stf6nk50z STD6NK50Z n-channel 500v - 0.93 ? - 5.6a to-220/to-220fp/dpak zener-protected supermesh? mosfet typical r ds (on) = 0.93 ? extremely high dv/dt capability 100% avalanche tested gate charge minimized very low intrinsic capacitances very good manufacturing repeatibility description the supermesh? series is obtained through an extreme optimization of st?s well established strip- based powermesh? layout. in addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. such series comple- ments st full range of high voltage mosfets in- cluding revolutionary mdmesh? products. applications high current, high speed switching ideal for off-line power supplies, adaptors and pfc lighting order codes type v dss r ds(on) i d pw stp6nk50z stf6nk50z STD6NK50Z 500 v 500 v 500 v <1.2 ? <1.2 ? <1.2 ? 5.6 a 5.6 a 5.6 a 90 w 25 w 90 w part number marking package packaging stp6nk50z p6nk50z to-220 tube stf6nk50z f6nk50z to-220fp tube STD6NK50Zt4 d6nk50z dpak tape & reel to-220 to-220fp 1 2 3 1 3 dpak internal schematic diagram .com .com .com 4 .com u datasheet
stp6nk50z - stf6nk50z - STD6NK50Z 2/12 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 5.6a, di/dt 200 a/s, v dd v (br)dss ,t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the device ? s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ? s integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit stp6nk50z STD6NK50Z stf6nk50z v ds drain-source voltage (v gs =0) 500 v v dgr drain-gate voltage (r gs =20k ? ) 500 v v gs gate- source voltage 30 v i d drain current (continuous) at t c =25 c 5.6 5.6 (*) a i d drain current (continuous) at t c = 100 c 3.5 3.5 (*) a i dm ( ) drain current (pulsed) 22.4 22.4 (*) a p tot total dissipation at t c =25 c 90 25 w derating factor 0.72 0.2 w/ c v esd(g-s) gate source esd(hbm-c=100pf, r=1.5k ?) 3000 v dv/dt (1) peak diode recovery voltage slope 4.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55to150 c to-220 dpak to-220fp rthj-case thermal resistance junction-case max 1.38 5 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 5.6 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 180 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v .com .com .com .com 4 .com u datasheet
3/12 stp6nk50z - stf6nk50z - STD6NK50Z electrical characteristics (t case =25 c unless otherwise specified) on/off dynamic source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =1ma,v gs = 0 500 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating,t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds =v gs ,i d = 50a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs =10v,i d = 2.8 a 0.93 1.2 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =8v , i d =2.8a 4.3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs = 0 690 100 20 pf pf pf c oss eq. (3) equivalent output capacitance v gs =0v,v ds = 0v to 400v 52 pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =250v,i d =2.8a r g =4.7 ? v gs =10v (resistive load see, figure 3) 12 23.5 31 23 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =400v,i d =5.6a, v gs =10v 24.6 4.9 13.3 nc nc nc symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 5.6 22.4 a a v sd (1) forwardonvoltage i sd =5.6a,v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5.6 a, di/dt = 100 a/s v dd =48v,t j =25 c (see test circuit, figure 5) 254 1.2 10 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5.6 a, di/dt = 100 a/s v dd =48v,t j = 150 c (see test circuit, figure 5) 360 1.9 11 ns c a .com .com .com .com 4 .com u datasheet
stp6nk50z - stf6nk50z - STD6NK50Z 4/12 thermal impedance for dpak safe operating area for dpak thermal impedance for to-220fp safe operating area for to-220fp thermal impedance for to-220 safe operating area for to-220 .com .com .com .com 4 .com u datasheet
5/12 stp6nk50z - stf6nk50z - STD6NK50Z transconductance transfer characteristics output characteristics capacitance variations gate charge vs gate-source voltage static drain-source on resistance .com .com .com .com 4 .com u datasheet
stp6nk50z - stf6nk50z - STD6NK50Z 6/12 maximum avalanche energy vs temperature normalized bvdss vs temperature source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp. .com .com .com .com 4 .com u datasheet
7/12 stp6nk50z - stf6nk50z - STD6NK50Z fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load .com .com .com .com 4 .com u datasheet
stp6nk50z - stf6nk50z - STD6NK50Z 8/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data .com .com .com .com 4 .com u datasheet
9/12 stp6nk50z - stf6nk50z - STD6NK50Z l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data .com .com .com .com 4 .com u datasheet
stp6nk50z - stf6nk50z - STD6NK50Z 10/12 dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data .com .com .com .com 4 .com u datasheet
11/12 stp6nk50z - stf6nk50z - STD6NK50Z tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters .com .com .com .com 4 .com u datasheet
stp6nk50z - stf6nk50z - STD6NK50Z 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com .com .com .com 4 .com u datasheet

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